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Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots

机译:场控制InGaN / GaN量子点的单光子发射

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摘要

Single photon emission was observed from site-controlled InGaN/GaN quantumdots. The single-photon nature of the emission was verified by the second-ordercorrelation function up to 90 K, the highest temperature to date forsite-controlled quantum dots. Micro-photoluminescence study on individualquantum dots showed linearly polarized single exciton emission with a lifetimeof a few nanoseconds. The dimensions of these quantum dots were well controlledto the precision of state-of-the-art fabrication technologies, as reflected inthe uniformity of their optical properties. The yield of optically activequantum dots was greater than 90%, among which 13%-25% exhibited single photonemission at 10 K.
机译:从位置控制的InGaN / GaN量子点观察到单光子发射。发射的单光子性质已通过高达90 K的二阶相关函数验证,这是迄今为止受位点控制的量子点的最高温度。对单个量子点的微光致发光研究表明,其线性极化单激子发射的寿命为几纳秒。这些量子点的尺寸可以很好地控制在最先进的制造技术的精度上,这体现在它们光学特性的均匀性上。旋光量子点的产率大于90%,其中13%-25%在10 K时表现出单光发射。

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